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ZXMC3A17DN8
ADVANCE INFORMATION
N-CHANNEL
ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS
STATIC
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain
Current
Gate-Body Leakage
Gate-Source Threshold
Voltage
Static Drain-Source On-State
Resistance (1)
Forward
V (BR)DSS
I DSS
I GSS
V GS(th)
R DS(on)
g fs
30
1.0
10
0.5
100
0.050
0.065
V
A
nA
V
S
I D = 250 A, V GS =0V
V DS =30V, V GS =0V
V GS =±20V, V DS =0V
I D = 250 A, V DS =V GS
V GS = 10V, I D = 7.8A
V GS = 4.5V, I D = 6.8A
V DS = 10V, I D = 7.8A
Transconductance (1) (3)
DYNAMIC (3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
600
104
58.5
pF
pF
pF
V DS = 25V, V GS =0V
f=1MHz
SWITCHING (2) (3)
Turn-On-Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
t d(on)
t r
t d(off)
t f
Q g
2.9
6.4
16
11.2
6.9
ns
ns
ns
ns
nC
V DD = 15V, I D =3.5A
R G ? 6.0 ,
V GS = 10V
V DS = 15V, V GS = 5V
I D = 3.5A
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q g
Q gs
Q gd
12.2
1.7
2.4
nC
nC
nC
V DS = 15V, V GS = 10V
I D = 3.5A
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V SD
0.85
0.95
V
T j =25°C, I S = 3.2A,
V GS =0V
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
t rr
Q rr
18.8
14.1
ns
nC
T j =25°C, I F = 3.5A,
di/dt=100A/ s
(1)
Measured under pulsed conditions. Pulse width
300ms; Duty cycle
2%.
(2)
(3)
Switching characteristics are independent of operating junction temperature.
For design aid only, not subject to production testing.
ISSUE 1 - OCTOBER 2005
SEMICONDUCTORS
4
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